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PD - 97581A
IRFHS9301PbF
HEXFET ? Power MOSFET
V DS
V GS max
-30
±20
V
V
TOP VIEW
R DS(on) max
(@V GS = -10V)
37
m Ω
D 1
6 D
D
D
D
G
S
Q g (typical)
I D
(@T C = 25°C)
13
-8.5
nC
A
D 2
G 3
S
D
5 D
4 S
D
D
2mm x 2mm PQFN
S
Applications
l
l
Charge and Discharge Switch for Battery Application
System/load switch
Features and Benefits
Features
Low R DSon ( ≤ 37m Ω)
Low Thermal Resistance to PCB ( ≤ 13°C/W)
Low Profile ( ≤ 1.0 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
Standard Pack
Note
Form Quantity
IRFHS9301TRPBF
IRFHS9301TR2PBF
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Tape and Reel 4000
Tape and Reel 400
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
V GS
I D @ T A = 25°C
I D @ T A = 70°C
I D @ T C = 25°C
I D @ T C = 70°C
I D @ T C = 25°C
I DM
P D @T A = 25°C
P D @ T A = 70°C
T J
T STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ -10V
Continuous Drain Current, V GS @ -10V
Continuous Drain Current, V GS @ -10V
Continuous Drain Current, V GS @ -10V
Continuous Drain Current, V GS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
-30
± 20
-6.0
-4.8
-13
-10
-8.5
-52
2.1
1.3
0.02
-55 to + 150
V
A
W
W/°C
°C
Notes ? through ? are on page 2
www.irf.com
1
11/12/10
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